New type of memory is about to enter the market(SMT Exhibition news)

31 Jul 2019

With the deep learning of artificial intelligence (AI) and the popularity of machine learning, high-performance computing (HPC), and IoT devices, huge amounts of data are dense and complex. In addition to providing computing power on SMT Exhibition processors, innovative memory technologies are needed. In order to process data efficiently. New memories, including magnetoresistive random access memory (MRAM), variable resistance random access memory (ReRAM), phase change random access memory (PCRAM), are beginning to be adopted in the SMT Exhibition market, while AI/HPC will accelerate new memories. Enter the market faster.

It is understood that TSMC has actively promoted the embedded flash memory (eFlash) process into a new memory embedded process such as MRAM and ReRAM in recent years, and has a deep cooperative relationship with application materials. UMC also has a layout of ReRAM. Wanghong has cooperated with IBM for many years and has been catching up with international companies. Furthermore, the group announced the use of SMT Exhibition MRAM in its NAND control IC.

Semiconductor equipment, the company's application materials, introduces a new manufacturing system that enables the SMT Exhibition deposition of new materials with atomic precision, which is the key to the production of the aforementioned new memories. Applied materials introduce state-of-the-art systems that allow these new SMT Exhibition memories to be produced on an industrial scale.

MRAM uses the fine magnetic materials commonly found in hard disk drives. MRAM is inherently fast and non-volatile, saving software and SMT Exhibition data even in the event of loss of power. Due to its high speed and high component tolerance, MRAM may end up as an alternative to SRAM (Static Random Access Memory) in third-level cache memory. MRAM can be integrated into the back-end interconnect SMT Exhibition layer of the IoT chip design to achieve smaller die sizes and lower costs.

As the amount of data increases exponentially, the cloud data center also needs to achieve an order of magnitude SMT Exhibition improvement in speed and power consumption for the data paths connecting servers and storage systems. ReRAM and PCRAM are fast, non-volatile, low-power, high-density memories that can be used as "storage-level memory" to fill the ever-expanding price and performance SMT Exhibition gap between server DRAM and storage memory.

ReRAM is made of new materials that act like fuses to selectively form filaments in billions of storage cells to represent SMT Exhibition data. In contrast, PCRAM uses a phase change material found in a DVD disc and performs bit programming by changing the state of the material from an amorphous state to a crystalline state.

Similar to the 3D NAND Flash memory model, ReRAM and PCRAM are arranged in a 3D SMT Exhibition structure, and memory manufacturers can add more layers to each generation of products to robustly reduce storage costs.

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